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2SB36 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SB36ON500Yes

2SB36** is a PNP bipolar junction transistor (BJT) manufactured by **ON Semiconductor (ON)**.

The 2SB36 is a PNP bipolar junction transistor (BJT) manufactured by ON Semiconductor (ON). Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Maximum Collector-Base Voltage (VCBO): -30V
  • Maximum Collector-Emitter Voltage (VCEO): -25V
  • Maximum Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -1A
  • Power Dissipation (PD): 1W
  • DC Current Gain (hFE): 40 to 240 (depending on operating conditions)
  • Operating Temperature Range: -65°C to +150°C

Descriptions:

  • The 2SB36 is a general-purpose PNP transistor designed for amplification and switching applications.
  • It comes in a TO-39 metal can package for better heat dissipation.
  • Suitable for low to medium power circuits.

Features:

  • High current capability (up to 1A).
  • Reliable performance in switching applications.
  • Robust construction for stable operation in various environments.

For exact datasheet details, refer to ON Semiconductor’s official documentation.

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