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MUN5213DW1T1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MUN5213DW1T1GON5975Yes

MUN5213DW1T1G** is a dual NPN bias resistor transistor manufactured by **ON Semiconductor**.

The MUN5213DW1T1G is a dual NPN bias resistor transistor manufactured by ON Semiconductor.

Specifications:

  • Type: Dual NPN Bias Resistor Transistor (BRT)
  • Configuration: Two independent NPN transistors with built-in resistors
  • Collector-Emitter Voltage (VCEO): 50V
  • Collector-Base Voltage (VCBO): 50V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 100mA per transistor
  • Power Dissipation (PD): 200mW
  • DC Current Gain (hFE): 35 (min) at IC = 5mA, VCE = 5V
  • Built-in Resistors:
  • Base resistor (R1): 10kΩ
  • Base-Emitter resistor (R2): 10kΩ
  • Package: SOT-363 (6-pin)

Descriptions:

  • Designed for space-saving applications where external resistors are not required.
  • Suitable for digital switching and amplification in compact circuits.
  • Ideal for automated assembly due to its small footprint.

Features:

  • Integrated bias resistors reduce component count.
  • High-voltage capability.
  • Pb-free and RoHS compliant.
  • Suitable for high-density PCB designs.

This component is commonly used in logic interfaces, driver circuits, and switching applications.

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