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L2N7002LT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
L2N7002LT1GLRC60000Yes

L2N7002LT1G** is a dual N-channel enhancement mode field-effect transistor (FET) manufactured by **ON Semiconductor (LRC)**.

The L2N7002LT1G is a dual N-channel enhancement mode field-effect transistor (FET) manufactured by ON Semiconductor (LRC).

Specifications:

  • Configuration: Dual N-Channel
  • Drain-Source Voltage (VDSS): 60V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): 115mA per channel
  • Total Power Dissipation (PD): 200mW
  • On-Resistance (RDS(on)): 5Ω (max) at VGS = 10V, ID = 50mA
  • Threshold Voltage (VGS(th)): 1V to 2.5V
  • Input Capacitance (Ciss): 15pF (typ)
  • Output Capacitance (Coss): 6pF (typ)
  • Reverse Transfer Capacitance (Crss): 3pF (typ)
  • Switching Speed: Fast switching capability
  • Package: SOT-363 (SC-88)

Descriptions:

  • Designed for low-voltage, low-current applications.
  • Suitable for switching and amplification in portable and battery-powered devices.
  • Matched pair configuration for balanced performance.

Features:

  • Low Threshold Voltage: Ensures compatibility with low-voltage logic.
  • Compact Package: SOT-363 footprint saves board space.
  • ESD Protection: Enhanced electrostatic discharge robustness.
  • Pb-Free & RoHS Compliant: Environmentally friendly manufacturing.

This device is commonly used in signal switching, level shifting, and load control applications.

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