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2SC3599 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC3599100Yes

2SC3599** is a high-frequency, high-speed switching NPN bipolar junction transistor (BJT) manufactured by various semiconductor companies.

The 2SC3599 is a high-frequency, high-speed switching NPN bipolar junction transistor (BJT) manufactured by various semiconductor companies. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Maximum Collector-Base Voltage (VCB): 30V
  • Maximum Collector-Emitter Voltage (VCE): 15V
  • Maximum Emitter-Base Voltage (VEB): 3V
  • Maximum Collector Current (IC): 50mA
  • Power Dissipation (PD): 200mW
  • Transition Frequency (fT): 7GHz (typical)
  • Noise Figure (NF): Low
  • Gain Bandwidth Product: High
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: SOT-23 (Surface Mount)

Descriptions:

  • Designed for high-frequency amplification and fast switching applications.
  • Suitable for RF (Radio Frequency), VHF (Very High Frequency), and microwave circuits.
  • Commonly used in communication devices, oscillators, and low-noise amplifiers.

Features:

  • High-speed switching capability.
  • Low noise performance, making it ideal for RF applications.
  • Compact SOT-23 package, suitable for space-constrained designs.
  • High transition frequency (fT), enabling efficient high-frequency operation.

This transistor is often used in wireless communication systems, signal processing, and high-frequency circuits. Always refer to the manufacturer's datasheet for detailed electrical characteristics and application guidelines.

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    2SC3599** is a high-frequency, high-speed switching NPN bipolar junction transistor (BJT) manufactured by various semiconductor companies.

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