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2SA749 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SA749PAN600Yes

2SA749** is a PNP bipolar junction transistor (BJT) manufactured by **PAN (Panasonic)**.

The 2SA749 is a PNP bipolar junction transistor (BJT) manufactured by PAN (Panasonic). Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Maximum Collector-Base Voltage (VCBO): -50V
  • Maximum Collector-Emitter Voltage (VCEO): -40V
  • Maximum Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -0.5A
  • Power Dissipation (Pc): 0.5W
  • Transition Frequency (fT): 100MHz
  • DC Current Gain (hFE): 60-320 (depending on operating conditions)
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

  • The 2SA749 is a general-purpose PNP transistor suitable for amplification and switching applications.
  • It is housed in a TO-92 package, making it compact and easy to use in various circuits.

Features:

  • Low noise performance for audio applications.
  • High current gain (hFE) for efficient signal amplification.
  • Fast switching speed, suitable for moderate-frequency applications.
  • Reliable performance in a wide temperature range.

This transistor is commonly used in audio amplifiers, signal processing circuits, and switching applications. For exact performance characteristics, refer to the manufacturer's datasheet.

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