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2SB1218AR(TX) Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SB1218AR(TX)PAN3000Yes

2SB1218AR(TX)** is a PNP bipolar junction transistor (BJT) manufactured by **PAN (Panasonic)**.

The 2SB1218AR(TX) is a PNP bipolar junction transistor (BJT) manufactured by PAN (Panasonic). Below are its key specifications, descriptions, and features:

Manufacturer:

  • PAN (Panasonic)

Specifications:

  • Transistor Type: PNP
  • Maximum Collector-Base Voltage (Vcb): -50V
  • Maximum Collector-Emitter Voltage (Vce): -50V
  • Maximum Emitter-Base Voltage (Veb): -5V
  • Maximum Collector Current (Ic): -3A
  • Power Dissipation (Pd): 25W
  • DC Current Gain (hFE): 60 to 320 (depending on operating conditions)
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: TO-220

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • Suitable for medium-power applications due to its 3A collector current rating.
  • Features a high current gain (hFE) range for efficient signal amplification.

Features:

  • High Current Capability: Supports up to 3A collector current.
  • Low Saturation Voltage: Ensures efficient switching performance.
  • Robust Construction: TO-220 package provides good thermal dissipation.
  • Wide hFE Range: Offers flexibility in amplification applications.

This transistor is commonly used in power regulation, audio amplification, and switching circuits.

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