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2SD1302S Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SD1302SPAN452Yes

2SD1302S** is a PNP-type silicon epitaxial planar transistor manufactured by **PAN (Panasonic)**.

The 2SD1302S is a PNP-type silicon epitaxial planar transistor manufactured by PAN (Panasonic). Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Collector-Base Voltage (VCBO): -50V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -3A
  • Collector Dissipation (PC): 25W
  • Junction Temperature (Tj): 150°C
  • Storage Temperature (Tstg): -55°C to +150°C
  • DC Current Gain (hFE): 60 to 320 (at IC = -1A, VCE = -5V)
  • Transition Frequency (fT): 30MHz (Typical)

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • Suitable for power control in electronic circuits.
  • Epitaxial planar construction ensures high reliability.

Features:

  • High current capability (up to -3A).
  • Low saturation voltage for efficient switching.
  • High DC current gain (hFE) for improved amplification.
  • TO-220F package for better heat dissipation.

This transistor is commonly used in power supply circuits, motor control, and audio amplifiers. Always refer to the official datasheet for detailed application guidelines.

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