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2SD1996S Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SD1996SPAN1300Yes

2SD1996S** is a silicon NPN epitaxial planar transistor manufactured by **PAN** (Panasonic).

The 2SD1996S is a silicon NPN epitaxial planar transistor manufactured by PAN (Panasonic). Below are the factual specifications, descriptions, and features:

Manufacturer: PAN (Panasonic)

Type: Silicon NPN Epitaxial Planar Transistor

Key Specifications:

  • Collector-Base Voltage (VCBO): 80V
  • Collector-Emitter Voltage (VCEO): 50V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 3A
  • Collector Dissipation (PC): 20W
  • Junction Temperature (Tj): 150°C
  • Storage Temperature (Tstg): -55°C to +150°C
  • DC Current Gain (hFE): 60 to 320 (at IC = 1A, VCE = 2V)
  • Transition Frequency (fT): 60MHz (min)

Features:

  • High current capability (3A)
  • Low saturation voltage
  • High-speed switching performance
  • Epitaxial planar construction for reliability

Applications:

  • Power amplification
  • Switching circuits
  • Motor control
  • General-purpose amplification

Package Type:

  • TO-220F (Fully molded)

This transistor is designed for medium-power applications where efficiency and reliability are required.

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