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2SB1275 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SB1275ROHM490Yes

Part Number:** 2SB1275 **Manufacturer:** ROHM ### **Specifications:** - **Transistor Type:** PNP Bipolar Junction Transistor (BJT) - **Collector-Base Voltage (VCBO):** -50V - **Collector-Emitter Voltage (VCEO):** -50V - **Emitter-Base Volta

Part Number: 2SB1275

Manufacturer: ROHM

Specifications:

  • Transistor Type: PNP Bipolar Junction Transistor (BJT)
  • Collector-Base Voltage (VCBO): -50V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -3A
  • Collector Dissipation (PC): 25W
  • Junction Temperature (Tj): 150°C
  • DC Current Gain (hFE): 60 to 320 (at VCE = -5V, IC = -1A)
  • Transition Frequency (fT): 20MHz (Typical)
  • Package: TO-220F (Fully Molded)

Descriptions:

The 2SB1275 is a PNP power transistor designed for general-purpose amplification and switching applications. It features high current capability, low saturation voltage, and good DC current gain.

Features:

  • High collector current (-3A)
  • Low collector-emitter saturation voltage
  • High power dissipation (25W)
  • Fully molded TO-220F package for improved thermal performance
  • Suitable for audio amplifiers, power regulators, and switching circuits

For detailed application notes, refer to ROHM's official datasheet.

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