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2SC143ES Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC143ESROHM140Yes

2SC143ES** is a silicon NPN transistor manufactured by **ROHM**.

The 2SC143ES is a silicon NPN transistor manufactured by ROHM. Below are its specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Maximum Collector-Base Voltage (VCBO): 50V
  • Maximum Collector-Emitter Voltage (VCEO): 50V
  • Maximum Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 100mA
  • Power Dissipation (Pc): 200mW
  • DC Current Gain (hFE): 120 ~ 560 (at VCE = 6V, IC = 2mA)
  • Transition Frequency (fT): 150MHz (Typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-92

Descriptions:

The 2SC143ES is a general-purpose NPN transistor designed for amplification and switching applications. It is suitable for low-power circuits, audio amplification, and signal processing due to its moderate gain and frequency characteristics.

Features:

  • High DC Current Gain (hFE)
  • Low Noise Performance
  • Compact TO-92 Package
  • Suitable for Small-Signal Amplification
  • Reliable Performance in Various Circuit Designs

This transistor is commonly used in consumer electronics, audio equipment, and small-signal amplification circuits.

For detailed electrical characteristics, refer to ROHM's official datasheet.

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