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SIH2131X01-XO Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SIH2131X01-XOSAMSUNG150Yes

SIH2131X01-XO** is a power MOSFET manufactured by **Samsung**.

The SIH2131X01-XO is a power MOSFET manufactured by Samsung. Below are its key specifications, descriptions, and features:

Specifications:

  • Manufacturer: Samsung
  • Type: N-Channel MOSFET
  • Drain-Source Voltage (VDSS): 30V
  • Continuous Drain Current (ID): 60A
  • Pulsed Drain Current (IDM): 240A
  • Power Dissipation (PD): 79W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 2.8mΩ (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 1.0V (min) - 2.5V (max)
  • Input Capacitance (Ciss): 2800pF (typ)
  • Output Capacitance (Coss): 1000pF (typ)
  • Reverse Transfer Capacitance (Crss): 130pF (typ)
  • Operating Temperature Range: -55°C to +175°C
  • Package: TO-220

Descriptions:

  • Designed for high-efficiency power switching applications.
  • Low on-resistance (RDS(on)) minimizes conduction losses.
  • Suitable for DC-DC converters, motor control, and power management circuits.

Features:

  • Low RDS(on): Enhances efficiency in power applications.
  • High Current Handling: Supports up to 60A continuous drain current.
  • Fast Switching Speed: Optimized for high-frequency operation.
  • Robust Thermal Performance: TO-220 package aids in heat dissipation.
  • Avalanche Energy Rated: Improves reliability in rugged conditions.

This MOSFET is commonly used in power supplies, automotive systems, and industrial applications. For detailed datasheet information, refer to Samsung's official documentation.

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