Professional IC Distribution & Technical Solutions

Part Number: KS5210E

Manufacturer: SAMSUNG

Specifications:

• Type: NAND Flash Memory
• Density: 512Mb (64MB)
• Interface: Asynchronous
• Organization:
• 64M x 8 bits
• Voltage Supply:
• VCC: 2.7V - 3.6V
• Operating Temperature Range:
• Commercial: 0°C to +70°C
• Industrial: -40°C to +85°C
• Speed:
• Access Time: 25ns (max)
• Package Options:
• 48-pin TSOP1
• 63-ball VFBGA

Descriptions:

The KS5210E is a 512Mb (64MB) NAND Flash memory device from Samsung, designed for high-performance data storage applications. It features an asynchronous interface and operates at a low voltage range of 2.7V to 3.6V. The device is available in both commercial and industrial temperature grades, making it suitable for a variety of environments.

Features:

• High Density: 512Mb (64MB) storage capacity
• Low Power Consumption: Optimized for energy efficiency
• Asynchronous Operation: Simplifies system integration
• Reliable Performance: Supports industrial temperature ranges
• Compact Packaging: Available in TSOP1 and VFBGA options
• Fast Access Time: Up to 25ns for efficient data retrieval

This device is commonly used in embedded systems, consumer electronics, and industrial applications requiring non-volatile memory storage.