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TH3C10 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
TH3C10SHINDENGEN200Yes

TH3C10 Manufacturer: SHINDENGEN** ### **Specifications:** - **Type:** Schottky Barrier Diode - **Maximum Average Forward Current (IF(AV)):** 3A - **Peak Forward Surge Current (IFSM):** 80A - **Maximum Reverse Voltage (VR):** 100V - **Forwar

TH3C10 Manufacturer: SHINDENGEN

Specifications:

  • Type: Schottky Barrier Diode
  • Maximum Average Forward Current (IF(AV)): 3A
  • Peak Forward Surge Current (IFSM): 80A
  • Maximum Reverse Voltage (VR): 100V
  • Forward Voltage Drop (VF): 0.85V (typical at 3A)
  • Reverse Leakage Current (IR): 50µA (maximum at VR)
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-220AB

Descriptions:

The TH3C10 is a high-efficiency Schottky Barrier Diode designed for rectification in power supply circuits. It features low forward voltage drop and fast switching characteristics, making it suitable for high-frequency applications.

Features:

  • Low Forward Voltage Drop for reduced power loss.
  • High Surge Current Capability (80A peak).
  • Fast Switching Performance for improved efficiency.
  • High-Temperature Operation up to 150°C.
  • TO-220AB Package for easy mounting and heat dissipation.

This diode is commonly used in DC-DC converters, power supplies, and reverse polarity protection circuits.

(Note: Always refer to the official datasheet for precise details.)

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