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SVF2N60MJ Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SVF2N60MJSL260Yes

SVF2N60MJ** is a power MOSFET manufactured by **SL**.

The SVF2N60MJ is a power MOSFET manufactured by SL. Below are its key specifications, descriptions, and features:

Specifications:

  • Manufacturer: SL
  • Type: N-Channel MOSFET
  • Drain-Source Voltage (VDSS): 600V
  • Continuous Drain Current (ID): 2A
  • Pulsed Drain Current (IDM): 8A
  • Power Dissipation (PD): 35W
  • Gate-Source Voltage (VGS): ±30V
  • On-Resistance (RDS(on)): 5.5Ω (max) @ VGS = 10V
  • Threshold Voltage (VGS(th)): 2V to 4V
  • Input Capacitance (Ciss): 300pF (typical)
  • Output Capacitance (Coss): 30pF (typical)
  • Reverse Transfer Capacitance (Crss): 10pF (typical)
  • Turn-On Delay Time (td(on)): 15ns (typical)
  • Turn-Off Delay Time (td(off)): 50ns (typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-252 (DPAK)

Descriptions:

  • The SVF2N60MJ is a high-voltage N-Channel MOSFET designed for switching applications.
  • It features low on-resistance and fast switching performance, making it suitable for power management circuits.
  • The device is packaged in a TO-252 (DPAK) surface-mount package for efficient heat dissipation.

Features:

  • High Voltage Rating (600V) – Suitable for high-voltage applications.
  • Low Gate Charge – Ensures fast switching speeds.
  • Low On-Resistance – Reduces conduction losses.
  • Avalanche Energy Specified – Enhances ruggedness in inductive load applications.
  • RoHS Compliant – Meets environmental standards.

This information provides a factual overview of the SVF2N60MJ MOSFET from SL.

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