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The SVF2N60MJ is a power MOSFET manufactured by SL. Below are its key specifications, descriptions, and features:

Specifications:

• Manufacturer: SL
• Type: N-Channel MOSFET
• Drain-Source Voltage (V_DSS): 600V
• Continuous Drain Current (I_D): 2A
• Pulsed Drain Current (I_DM): 8A
• Power Dissipation (P_D): 35W
• Gate-Source Voltage (V_GS): ±30V
• On-Resistance (R_DS(on)): 5.5Ω (max) @ V_GS = 10V
• Threshold Voltage (V_GS(th)): 2V to 4V
• Input Capacitance (C_iss): 300pF (typical)
• Output Capacitance (C_oss): 30pF (typical)
• Reverse Transfer Capacitance (C_rss): 10pF (typical)
• Turn-On Delay Time (t_d(on)): 15ns (typical)
• Turn-Off Delay Time (t_d(off)): 50ns (typical)
• Operating Temperature Range: -55°C to +150°C
• Package: TO-252 (DPAK)

Descriptions:

• The SVF2N60MJ is a high-voltage N-Channel MOSFET designed for switching applications.
• It features low on-resistance and fast switching performance, making it suitable for power management circuits.
• The device is packaged in a TO-252 (DPAK) surface-mount package for efficient heat dissipation.

Features:

• High Voltage Rating (600V) – Suitable for high-voltage applications.
• Low Gate Charge – Ensures fast switching speeds.
• Low On-Resistance – Reduces conduction losses.
• Avalanche Energy Specified – Enhances ruggedness in inductive load applications.
• RoHS Compliant – Meets environmental standards.

This information provides a factual overview of the SVF2N60MJ MOSFET from SL.