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TB1032N Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
TB1032NTOS239Yes

TB1032N** is a power transistor manufactured by **Toshiba (TOS)**.

The TB1032N is a power transistor manufactured by Toshiba (TOS). Below are the factual specifications, descriptions, and features:

Specifications:

  • Type: NPN Bipolar Power Transistor
  • Collector-Emitter Voltage (VCEO): 60V
  • Collector-Base Voltage (VCBO): 60V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 3A
  • Collector Dissipation (PC): 30W
  • DC Current Gain (hFE): 40 to 320
  • Transition Frequency (fT): 3MHz
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-220

Descriptions:

  • Designed for general-purpose power amplification and switching applications.
  • Suitable for medium-power circuits in consumer electronics, power supplies, and motor control.

Features:

  • High current capability (3A).
  • Low saturation voltage for efficient switching.
  • Wide range of DC current gain (hFE).
  • Robust TO-220 package for effective heat dissipation.

For exact application details, refer to the official Toshiba datasheet.

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