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TD2001P Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
TD2001PTOS348Yes

TD2001P is a power transistor manufactured by TOS (Toshiba).

The TD2001P is a power transistor manufactured by TOS (Toshiba). Below are the factual specifications, descriptions, and features:

Specifications:

  • Type: NPN Silicon Epitaxial Planar Transistor
  • Collector-Emitter Voltage (VCEO): 60V
  • Collector-Base Voltage (VCBO): 80V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 2A
  • Total Power Dissipation (PT): 20W
  • Junction Temperature (Tj): 150°C
  • Storage Temperature (Tstg): -55°C to +150°C
  • DC Current Gain (hFE): 60-320 (at IC = 0.5A, VCE = 5V)

Descriptions:

  • The TD2001P is a high-power NPN transistor designed for general-purpose amplification and switching applications.
  • It is housed in a TO-220 plastic package, providing efficient thermal dissipation.
  • Suitable for use in power supplies, motor control, and audio amplifiers.

Features:

  • High current capability (2A)
  • Low saturation voltage
  • High DC current gain (hFE)
  • Robust thermal performance
  • TO-220 package for easy mounting

This information is based on TOS (Toshiba) datasheets and technical documentation.

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