Professional IC Distribution & Technical Solutions

Global leader in semiconductor components distribution and technical support services, empowering your product innovation and industry advancement

1SS389 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
1SS389TOSHIBA2878Yes

1SS389 is a high-speed switching diode manufactured by Toshiba.

The 1SS389 is a high-speed switching diode manufactured by Toshiba. Here are the key specifications:

  • Type: Silicon Epitaxial Planar Diode
  • Maximum Repetitive Peak Reverse Voltage (VRRM): 30 V
  • Maximum DC Reverse Voltage (VR): 30 V
  • Maximum Forward Voltage (VF): 1 V at 10 mA
  • Maximum Reverse Current (IR): 0.1 µA at 25 V
  • Maximum Total Capacitance (CT): 2 pF at 0 V, 1 MHz
  • Maximum Reverse Recovery Time (trr): 4 ns
  • Operating Temperature Range: -55°C to +125°C
  • Package: SOD-323 (Mini-Mold)

These specifications are typical for high-speed switching applications.

Request Quotation

Part Number:
Quantity:
Target Price($USD):
Email:
Contact Person:
Additional Part Number
Quantity (Additional)
Special Requirements
Verification: =

Recommended Products

  • 86C807N-6AA5 ,185,DIP28

    TOSHIBA part 86C807N-6AA5** is an integrated circuit (IC) from Toshiba's semiconductor lineup.

  • 1SS272(TE85L,F) ,42000,SOT-23年份:22+

    SS272(TE85L,F)** is a Schottky barrier diode manufactured by Toshiba.

  • TA7200P ,100,

    TA7200P is an integrated circuit (IC) manufactured by **TOSHIBA**.

  • LA7836,SANYO,50,ZIP

    LM1876T,NS,50,ZIP


Sales Support

Our sales team is ready to assist with:

  • Fast quotation
  • Price Discount
  • Technical specifications
Contact sales