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2SA1832-Y,LXGF(T Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SA1832-Y,LXGF(TTOSHIBA18000Yes

2SA1832-Y,LXGF(T)** is a PNP bipolar junction transistor (BJT) manufactured by **TOSHIBA**.

The 2SA1832-Y,LXGF(T) is a PNP bipolar junction transistor (BJT) manufactured by TOSHIBA. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Maximum Collector-Base Voltage (V_CBO): -200V
  • Maximum Collector-Emitter Voltage (V_CEO): -200V
  • Maximum Emitter-Base Voltage (V_EBO): -5V
  • Collector Current (I_C): -1.5A
  • Power Dissipation (P_C): 1W
  • DC Current Gain (h_FE): 100 to 320 (at V_CE = -5V, I_C = -0.1A)
  • Transition Frequency (f_T): 80MHz
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-92MOD (miniature plastic package)

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • Suitable for low to medium power circuits.
  • High voltage capability with good current gain linearity.

Features:

  • High Voltage Tolerance: Supports up to -200V collector-emitter voltage.
  • Good Frequency Response: Transition frequency of 80MHz for amplification applications.
  • Compact Package: TO-92MOD package for space-constrained designs.
  • Wide h_FE Range: Provides flexibility in circuit design.

This transistor is commonly used in audio amplifiers, power regulation circuits, and switching applications. For detailed performance characteristics, refer to the official TOSHIBA datasheet.

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