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The 2SA1832-Y,LXGF(T) is a PNP bipolar junction transistor (BJT) manufactured by TOSHIBA. Below are its key specifications, descriptions, and features:

Specifications:

• Transistor Type: PNP
• Maximum Collector-Base Voltage (V_CBO): -200V
• Maximum Collector-Emitter Voltage (V_CEO): -200V
• Maximum Emitter-Base Voltage (V_EBO): -5V
• Collector Current (I_C): -1.5A
• Power Dissipation (P_C): 1W
• DC Current Gain (h_FE): 100 to 320 (at V_CE = -5V, I_C = -0.1A)
• Transition Frequency (f_T): 80MHz
• Operating Temperature Range: -55°C to +150°C
• Package: TO-92MOD (miniature plastic package)

Descriptions:

• Designed for general-purpose amplification and switching applications.
• Suitable for low to medium power circuits.
• High voltage capability with good current gain linearity.

Features:

• High Voltage Tolerance: Supports up to -200V collector-emitter voltage.
• Good Frequency Response: Transition frequency of 80MHz for amplification applications.
• Compact Package: TO-92MOD package for space-constrained designs.
• Wide h_FE Range: Provides flexibility in circuit design.

This transistor is commonly used in audio amplifiers, power regulation circuits, and switching applications. For detailed performance characteristics, refer to the official TOSHIBA datasheet.