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TLS337T Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
TLS337TTOSHIBA1500Yes

TLS337T is a phototransistor manufactured by Toshiba.

The TLS337T is a phototransistor manufactured by Toshiba. Below are the key specifications, descriptions, and features based on available data:

Specifications:

  • Type: NPN Silicon Planar Phototransistor
  • Package: Miniature Surface Mount Type (SMD)
  • Wavelength Range: 400 nm to 1100 nm (Peak Sensitivity: ~940 nm)
  • Collector-Emitter Voltage (VCEO): 30 V (Max)
  • Emitter-Collector Voltage (VECO): 5 V (Max)
  • Collector Current (IC): 20 mA (Max)
  • Power Dissipation (PC): 75 mW (Max)
  • Operating Temperature Range: -25°C to +85°C
  • Storage Temperature Range: -40°C to +100°C

Descriptions:

  • The TLS337T is designed for high-sensitivity light detection in the near-infrared (IR) range.
  • It features a built-in daylight blocking filter to improve signal-to-noise ratio in ambient light conditions.
  • Suitable for applications requiring compact size and surface-mount compatibility.

Features:

1. High Sensitivity: Optimized for IR detection at 940 nm.

2. Daylight Filter: Reduces interference from visible light.

3. Miniature SMD Package: Ideal for space-constrained designs.

4. Low Dark Current: Ensures reliable performance in low-light conditions.

For detailed electrical characteristics and performance graphs, refer to Toshiba’s official datasheet.

(Note: Always verify specifications with the latest manufacturer documentation.)

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