Professional IC Distribution & Technical Solutions

The TPC8104-H(TE12L) is a P-channel MOSFET manufactured by Toshiba. Below are its key specifications, descriptions, and features:

Specifications:

• Type: P-channel MOSFET
• Drain-Source Voltage (V_DSS): -30V
• Gate-Source Voltage (V_GS): ±20V
• Continuous Drain Current (I_D): -4.5A
• Pulsed Drain Current (I_DM): -18A
• Power Dissipation (P_D): 1.5W
• On-Resistance (R_DS(ON)): 60mΩ (max) at V_GS = -10V
• Threshold Voltage (V_GS(th)): -1.0V to -2.5V
• Input Capacitance (C_iss): 500pF (typ)
• Output Capacitance (C_oss): 120pF (typ)
• Reverse Transfer Capacitance (C_rss): 50pF (typ)
• Turn-On Delay Time (t_d(on)): 10ns (typ)
• Turn-Off Delay Time (t_d(off)): 30ns (typ)
• Operating Temperature Range: -55°C to +150°C
• Package: SOP-8 (TE12L)

Descriptions:

• The TPC8104-H(TE12L) is a compact, high-performance P-channel MOSFET designed for power switching applications.
• It features low on-resistance and fast switching characteristics, making it suitable for load switching, power management, and DC-DC conversion.

Features:

• Low on-resistance (R_DS(ON)) for reduced power loss
• Fast switching speed for improved efficiency
• Compact SOP-8 package for space-saving designs
• High reliability and ruggedness
• Suitable for battery-powered and portable applications

This information is based on Toshiba's datasheet for the TPC8104-H(TE12L). For detailed electrical characteristics and application notes, refer to the official manufacturer documentation.