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TPC8104-H(TE12L) Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
TPC8104-H(TE12L)TOSHIBA4800Yes

TPC8104-H(TE12L)** is a P-channel MOSFET manufactured by **Toshiba**.

The TPC8104-H(TE12L) is a P-channel MOSFET manufactured by Toshiba. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: P-channel MOSFET
  • Drain-Source Voltage (VDSS): -30V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): -4.5A
  • Pulsed Drain Current (IDM): -18A
  • Power Dissipation (PD): 1.5W
  • On-Resistance (RDS(ON)): 60mΩ (max) at VGS = -10V
  • Threshold Voltage (VGS(th)): -1.0V to -2.5V
  • Input Capacitance (Ciss): 500pF (typ)
  • Output Capacitance (Coss): 120pF (typ)
  • Reverse Transfer Capacitance (Crss): 50pF (typ)
  • Turn-On Delay Time (td(on)): 10ns (typ)
  • Turn-Off Delay Time (td(off)): 30ns (typ)
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOP-8 (TE12L)

Descriptions:

  • The TPC8104-H(TE12L) is a compact, high-performance P-channel MOSFET designed for power switching applications.
  • It features low on-resistance and fast switching characteristics, making it suitable for load switching, power management, and DC-DC conversion.

Features:

  • Low on-resistance (RDS(ON)) for reduced power loss
  • Fast switching speed for improved efficiency
  • Compact SOP-8 package for space-saving designs
  • High reliability and ruggedness
  • Suitable for battery-powered and portable applications

This information is based on Toshiba's datasheet for the TPC8104-H(TE12L). For detailed electrical characteristics and application notes, refer to the official manufacturer documentation.

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