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2SC2713-GR(T5LPEWF Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC2713-GR(T5LPEWFTOSHIBA3000Yes

2SC2713-GR(T5LPEWF)** is a NPN silicon epitaxial planar transistor manufactured by **TOSHIBA**.

The 2SC2713-GR(T5LPEWF) is a NPN silicon epitaxial planar transistor manufactured by TOSHIBA.

Key Specifications:

  • Transistor Type: NPN
  • Maximum Collector-Base Voltage (VCB): 50V
  • Maximum Collector-Emitter Voltage (VCE): 45V
  • Maximum Emitter-Base Voltage (VEB): 5V
  • Collector Current (IC): 100mA
  • Total Power Dissipation (Ptot): 200mW
  • Junction Temperature (Tj): 125°C
  • DC Current Gain (hFE): 120 to 820 (at VCE = 6V, IC = 2mA)
  • Transition Frequency (fT): 200MHz (min)
  • Package: SOT-23 (Miniature Surface-Mount)

Descriptions & Features:

  • Designed for high-frequency amplification in RF and general-purpose applications.
  • Low noise performance suitable for small-signal amplification.
  • Compact SOT-23 package for space-saving PCB designs.
  • High current gain (hFE) range for improved signal amplification.
  • Suitable for switching and amplification in consumer electronics, communication devices, and audio circuits.

For detailed electrical characteristics and application notes, refer to the official TOSHIBA datasheet.

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