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2SC5810(T2LXG,ZF) Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC5810(T2LXG,ZF)TOSHIBA800Yes

2SC5810(T2LXG,ZF)** is a high-frequency NPN bipolar junction transistor (BJT) manufactured by **TOSHIBA**.

The 2SC5810(T2LXG,ZF) is a high-frequency NPN bipolar junction transistor (BJT) manufactured by TOSHIBA. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Maximum Collector-Base Voltage (VCB): 30V
  • Maximum Collector-Emitter Voltage (VCE): 20V
  • Maximum Emitter-Base Voltage (VEB): 4V
  • Collector Current (IC): 100mA
  • Total Power Dissipation (Ptot): 150mW
  • Junction Temperature (Tj): 125°C
  • Transition Frequency (fT): 6GHz (typical)
  • Noise Figure (NF): 1.2dB (typical at 1GHz)
  • DC Current Gain (hFE): 30 to 200 (at VCE = 5V, IC = 10mA)
  • Package Type: SOT-323 (Miniature Surface-Mount Package)

Description:

The 2SC5810(T2LXG,ZF) is a high-frequency, low-noise NPN transistor designed for RF amplification in applications such as mobile communication devices, VHF/UHF amplifiers, and other high-speed switching circuits. Its compact SOT-323 package makes it suitable for space-constrained designs.

Features:

  • High Transition Frequency (6GHz) for excellent high-frequency performance.
  • Low Noise Figure (1.2dB @ 1GHz) for improved signal clarity in RF applications.
  • Small SOT-323 Package enables high-density PCB mounting.
  • Suitable for RF Amplification in wireless communication systems.

This transistor is optimized for use in high-frequency circuits where low noise and high-speed switching are critical.

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