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2SD2531 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SD2531TOSHIBA120Yes

part 2SD2531 is a silicon NPN epitaxial planar type transistor manufactured by TOSHIBA.

The part 2SD2531 is a silicon NPN epitaxial planar type transistor manufactured by TOSHIBA. It is designed for use in low-frequency power amplification and switching applications. Key specifications include:

  • Collector-Base Voltage (VCBO): 60V
  • Collector-Emitter Voltage (VCEO): 60V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 3A
  • Collector Dissipation (PC): 25W
  • Junction Temperature (Tj): 150°C
  • Storage Temperature (Tstg): -55°C to +150°C
  • DC Current Gain (hFE): 60 to 320 (at IC = 1A, VCE = 2V)
  • Transition Frequency (fT): 20MHz (at IC = 0.5A, VCE = 10V)
  • Package: TO-220

These specifications are typical for the 2SD2531 transistor as provided by TOSHIBA.

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