Professional IC Distribution & Technical Solutions

Global leader in semiconductor components distribution and technical support services, empowering your product innovation and industry advancement

Product Catalog Contact Us
Home > TOSHIBA04 > TK750A60F,S4X(S

TK750A60F,S4X(S Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
TK750A60F,S4X(STOSHIBA10000Yes

TK750A60F,S4X(S) is a semiconductor device manufactured by Toshiba.

The TK750A60F,S4X(S) is a semiconductor device manufactured by Toshiba. Below are the factual specifications, descriptions, and features:

Specifications:

  • Manufacturer: Toshiba
  • Part Number: TK750A60F,S4X(S)
  • Type: IGBT (Insulated Gate Bipolar Transistor) Module
  • Voltage Rating (Vces): 600V
  • Current Rating (Ic): 750A
  • Configuration: Single IGBT with Diode
  • Package Type: Module
  • Mounting Style: Screw or Bolt-on
  • Operating Temperature Range: Typically -40°C to 150°C (exact range may vary)

Descriptions:

  • Designed for high-power switching applications.
  • Suitable for industrial inverters, motor drives, and power conversion systems.
  • Features low saturation voltage and high-speed switching.
  • Includes a built-in freewheeling diode for protection.

Features:

  • High Current Capability: Supports up to 750A continuous current.
  • Low Loss: Optimized for efficiency with low conduction and switching losses.
  • Robust Construction: Designed for reliability in demanding environments.
  • Isolated Base Plate: Provides electrical isolation for safety and thermal management.

For detailed datasheets or application-specific parameters, refer to Toshiba’s official documentation.

Request Quotation

Part Number:
Quantity:
Target Price($USD):
Email:
Contact Person:
Additional Part Number
Quantity (Additional)
Special Requirements
Verification: =

Recommended Products

  • 2SC2881-Y(TE12L,ZC ,10000,22+年份：SOT-89

    2SC2881-Y(TE12L,ZC)** is a high-frequency NPN bipolar junction transistor (BJT) manufactured by **TOSHIBA**.

  • T3512H ,5000,二极管

    Part Number:** T3512H **Manufacturer:** TOSHIBA ### **Specifications:** - **Type:** Thyristor (SCR - Silicon Controlled Rectifier) - **Voltage Rating:** 600V (Repetitive Peak Off-State Voltage, VDRM) - **Current Rating:** 12A (Average On-Stat

  • TPD4120AK ,280,DIP26

    TPD4120AK** is a power MOSFET module manufactured by **TOSHIBA**.

  • 2026-1BM,MICROCHIP,69,SOP8

    BH1417F,ROHM,69,SOP

Sales Support

Our sales team is ready to assist with:

  • Fast quotation
  • Price Discount
  • Technical specifications
Contact sales