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1SS362(TE85L,F) Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
1SS362(TE85L,F)TOSHIBA96000Yes

SS362(TE85L,F)** is a semiconductor device manufactured by **Toshiba**.

The SS362(TE85L,F) is a semiconductor device manufactured by Toshiba. Below are its key specifications, descriptions, and features:

Specifications:

  • Manufacturer: Toshiba
  • Type: Schottky Barrier Diode
  • Package: SOD-323 (Miniature Surface Mount)
  • Maximum Reverse Voltage (VR): 60V
  • Average Rectified Current (IO): 3A
  • Forward Voltage (VF): 0.55V (Typical at 3A)
  • Reverse Leakage Current (IR): 500µA (Max at 60V)
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

  • Function: Used for high-efficiency rectification in power supplies, DC-DC converters, and reverse polarity protection.
  • Technology: Schottky barrier structure for low forward voltage and fast switching.
  • Applications: Switching power supplies, automotive electronics, and portable devices.

Features:

  • Low Forward Voltage: Reduces power loss.
  • High Current Capability: Supports up to 3A continuous current.
  • Fast Switching Speed: Minimizes switching losses.
  • Compact Package: SOD-323 for space-saving PCB designs.
  • High Reliability: Suitable for industrial and automotive applications.

For detailed datasheets, refer to Toshiba’s official documentation.

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