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2SA970-GR Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SA970-GRTOSHIBA435Yes

2SA970-GR is a PNP silicon transistor manufactured by Toshiba.

The 2SA970-GR is a PNP silicon transistor manufactured by Toshiba. Here are the key specifications:

  • Type: PNP Silicon Transistor
  • Package: TO-92
  • Collector-Base Voltage (VCBO): -120V
  • Collector-Emitter Voltage (VCEO): -120V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -0.1A
  • Collector Dissipation (PC): 0.3W
  • Junction Temperature (Tj): 150°C
  • Storage Temperature (Tstg): -55°C to +150°C
  • DC Current Gain (hFE): 200 to 700 (GR grade), 400 to 1400 (BL grade)
  • Transition Frequency (fT): 100MHz

These specifications are based on the GR/BL grade variants of the 2SA970 transistor.

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