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2N80L-TN3-R Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2N80L-TN3-RUTC5000Yes

2N80L-TN3-R** is a power MOSFET manufactured by **Unisonic Technologies (UTC)**.

The 2N80L-TN3-R is a power MOSFET manufactured by Unisonic Technologies (UTC).

Specifications:

  • Type: N-Channel MOSFET
  • Drain-Source Voltage (VDSS): 800V
  • Continuous Drain Current (ID): 2A
  • Pulsed Drain Current (IDM): 8A
  • Power Dissipation (PD): 30W
  • Gate-Source Voltage (VGS): ±30V
  • On-Resistance (RDS(ON)): 5.5Ω (max) @ VGS = 10V
  • Threshold Voltage (VGS(th)): 2-4V
  • Input Capacitance (Ciss): 60pF (typ)
  • Output Capacitance (Coss): 15pF (typ)
  • Reverse Transfer Capacitance (Crss): 5pF (typ)
  • Turn-On Delay Time (td(on)): 10ns (typ)
  • Turn-Off Delay Time (td(off)): 35ns (typ)
  • Package: TO-252 (DPAK)

Features:

  • High voltage capability (800V)
  • Low gate charge
  • Fast switching speed
  • Improved dv/dt capability
  • RoHS compliant

Applications:

  • Switching power supplies
  • LED drivers
  • Motor control
  • Inverters

This MOSFET is designed for high-efficiency power switching applications. For detailed performance curves and reliability data, refer to the official UTC datasheet.

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