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UT3P01ZG-AL3-R Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
UT3P01ZG-AL3-RUTC 207000Yes

Manufacturer:** UTC (Unisonic Technologies) **Part Number:** UT3P01ZG-AL3-R ### **Specifications:** - **Type:** P-Channel MOSFET - **Drain-Source Voltage (VDS):** -30V - **Gate-Source Voltage (VGS):** ±20V - **Continuous Drain Current (ID)

Manufacturer: UTC (Unisonic Technologies)

Part Number: UT3P01ZG-AL3-R

Specifications:

  • Type: P-Channel MOSFET
  • Drain-Source Voltage (VDS): -30V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): -3.5A
  • Power Dissipation (PD): 1.25W
  • On-Resistance (RDS(ON)): 100mΩ (max) @ VGS = -10V, ID = -3.5A
  • Threshold Voltage (VGS(th)): -1V to -3V
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-23

Descriptions:

The UT3P01ZG-AL3-R is a P-Channel enhancement-mode MOSFET designed for low-voltage, high-efficiency switching applications. It features low on-resistance and fast switching performance, making it suitable for power management in portable electronics, battery protection circuits, and load switching.

Features:

  • Low threshold voltage
  • High-speed switching
  • Low on-resistance
  • Small SOT-23 package for space-saving designs
  • RoHS compliant

For detailed electrical characteristics and application notes, refer to the official UTC datasheet.

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