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UB2012DG-S08-R Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
UB2012DG-S08-RUTC 45000Yes

UB2012DG-S08-R is a Schottky Barrier Diode (SBD) manufactured by UTC (Unisonic Technologies).

The UB2012DG-S08-R is a Schottky Barrier Diode (SBD) manufactured by UTC (Unisonic Technologies). Below are the factual specifications, descriptions, and features:

Specifications:

  • Manufacturer: UTC (Unisonic Technologies)
  • Type: Schottky Barrier Diode (SBD)
  • Package: DO-201AD (SMB)
  • Configuration: Single Diode
  • Maximum Average Forward Current (IF(AV)): 20A
  • Peak Forward Surge Current (IFSM): 150A
  • Maximum Reverse Voltage (VR): 20V
  • Forward Voltage Drop (VF): 0.55V (Typical at 10A)
  • Reverse Leakage Current (IR): 0.5mA (Maximum at VR = 20V, 25°C)
  • Operating Temperature Range: -55°C to +150°C
  • Storage Temperature Range: -55°C to +150°C

Descriptions:

  • The UB2012DG-S08-R is a high-efficiency Schottky diode designed for low-voltage, high-frequency rectification applications.
  • It features a low forward voltage drop and fast switching characteristics, making it suitable for power supply circuits, DC-DC converters, and reverse polarity protection.

Features:

  • Low Forward Voltage Drop: Enhances efficiency in power applications.
  • High Current Capability: Supports up to 20A continuous forward current.
  • Fast Switching Speed: Reduces switching losses in high-frequency circuits.
  • High Surge Current Capability: Withstands up to 150A peak surge current.
  • RoHS Compliant: Meets environmental standards.

This information is based on the manufacturer's datasheet and technical documentation.

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