The UB2012DG-S08-R is a Schottky Barrier Diode (SBD) manufactured by UTC (Unisonic Technologies). Below are the factual specifications, descriptions, and features:
Specifications:
- Manufacturer: UTC (Unisonic Technologies)
- Type: Schottky Barrier Diode (SBD)
- Package: DO-201AD (SMB)
- Configuration: Single Diode
- Maximum Average Forward Current (IF(AV)): 20A
- Peak Forward Surge Current (IFSM): 150A
- Maximum Reverse Voltage (VR): 20V
- Forward Voltage Drop (VF): 0.55V (Typical at 10A)
- Reverse Leakage Current (IR): 0.5mA (Maximum at VR = 20V, 25°C)
- Operating Temperature Range: -55°C to +150°C
- Storage Temperature Range: -55°C to +150°C
Descriptions:
- The UB2012DG-S08-R is a high-efficiency Schottky diode designed for low-voltage, high-frequency rectification applications.
- It features a low forward voltage drop and fast switching characteristics, making it suitable for power supply circuits, DC-DC converters, and reverse polarity protection.
Features:
- Low Forward Voltage Drop: Enhances efficiency in power applications.
- High Current Capability: Supports up to 20A continuous forward current.
- Fast Switching Speed: Reduces switching losses in high-frequency circuits.
- High Surge Current Capability: Withstands up to 150A peak surge current.
- RoHS Compliant: Meets environmental standards.
This information is based on the manufacturer's datasheet and technical documentation.