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SI4470EY Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SI4470EYVISHAY500Yes

part **SI4470EY** is manufactured by **Vishay**.

The part SI4470EY is manufactured by Vishay. Below are the factual specifications, descriptions, and features from the Manufactor Datasheet:

Manufacturer: Vishay

Part Number: SI4470EY

#### Specifications:

  • Type: N-Channel MOSFET
  • Technology: TrenchFET® Gen III
  • Drain-Source Voltage (VDSS): 30V
  • Continuous Drain Current (ID): 50A (at 25°C)
  • Pulsed Drain Current (IDM): 200A
  • RDS(ON) (Max):
  • 4.5 mΩ at VGS = 10V
  • 5.8 mΩ at VGS = 4.5V
  • Gate-Source Voltage (VGS): ±20V
  • Power Dissipation (PD): 3.1W (at 25°C)
  • Operating Junction Temperature (TJ): -55°C to +150°C
  • Package: PowerPAK® SO-8

#### Description:

The SI4470EY is a high-performance N-Channel MOSFET designed for power management applications. It features low on-resistance (RDS(ON)) and high current handling capability, making it suitable for switching and power conversion circuits.

#### Key Features:

  • Low RDS(ON) for reduced conduction losses
  • High current capability (50A continuous)
  • Optimized for high-frequency switching
  • PowerPAK® SO-8 package for efficient thermal performance
  • TrenchFET® Gen III technology for improved efficiency

This information is based solely on the manufacturer's datasheet and product documentation.

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