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S21MT1 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
S21MT1100Yes

S21MT1** is a **surface-mount Schottky barrier diode** designed for high-efficiency rectification in various electronic applications.

The S21MT1 is a surface-mount Schottky barrier diode designed for high-efficiency rectification in various electronic applications. Below are its key specifications, descriptions, and features:

Manufacturer Specifications:

  • Manufacturer: Typically produced by Diodes Incorporated or similar semiconductor companies.
  • Type: Schottky Barrier Diode
  • Package: SOD-123 (Surface Mount)
  • Maximum Reverse Voltage (VR): 20V
  • Average Forward Current (IF): 2A
  • Peak Forward Surge Current (IFSM): 30A (non-repetitive)
  • Forward Voltage Drop (VF): 0.38V (at 1A)
  • Reverse Leakage Current (IR): 0.5mA (max at VR = 20V)
  • Operating Temperature Range: -65°C to +125°C
  • Junction Temperature (TJ): 150°C (max)

Descriptions:

  • The S21MT1 is a low-power Schottky diode optimized for high-speed switching and low forward voltage drop.
  • It is commonly used in power supply circuits, DC-DC converters, reverse polarity protection, and signal clamping.
  • The SOD-123 package ensures compact PCB mounting for space-constrained designs.

Features:

  • Low Forward Voltage Drop (0.38V at 1A) for improved efficiency.
  • Fast Switching Speed due to Schottky barrier construction.
  • High Surge Current Capability (30A peak).
  • Low Reverse Leakage Current for better power conservation.
  • RoHS Compliant & Lead-Free for environmental safety.

This diode is ideal for battery-powered devices, voltage clamping, and high-frequency rectification applications.

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