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3SK113 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
3SK113HIT428Yes

HIT part 3SK113** is a **dual-gate MOSFET** designed for **RF and mixer applications**.

The HIT part 3SK113 is a dual-gate MOSFET designed for RF and mixer applications. Below are its key specifications, descriptions, and features:

Manufacturer: HIT (Hitachi)

Specifications:

  • Type: N-channel dual-gate MOSFET
  • Maximum Drain-Source Voltage (VDS): 15V
  • Maximum Gate-Source Voltage (VGS): ±8V
  • Drain Current (ID): 30mA
  • Power Dissipation (PD): 200mW
  • Input Capacitance (Ciss): 2.5pF (typical)
  • Forward Transfer Admittance (|Yfs|): 10mS (typical)
  • Noise Figure (NF): Low noise performance (suitable for RF applications)
  • Package: TO-72 (metal can package)

Descriptions:

  • Designed for high-frequency amplification and mixing in RF circuits.
  • Features two independent gates, allowing for improved gain control and signal mixing.
  • Commonly used in VHF/UHF receivers, RF amplifiers, and communication circuits.

Features:

  • Low noise for sensitive RF applications.
  • High input impedance due to insulated gate structure.
  • Dual-gate design provides better isolation and control over amplification.
  • Stable performance in high-frequency environments.

This MOSFET is optimized for small-signal RF applications where precise gain control and low noise are critical.

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