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IRFP4668PBF Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
IRFP4668PBFINFINEON 4000Yes

IRFP4668PBF** is a power MOSFET manufactured by **Infineon Technologies**.

The IRFP4668PBF is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

Specifications:

  • Manufacturer: Infineon Technologies
  • Part Number: IRFP4668PBF
  • Type: N-Channel Power MOSFET
  • Package: TO-247AC
  • Drain-Source Voltage (VDSS): 200V
  • Continuous Drain Current (ID): 130A (at 25°C)
  • Pulsed Drain Current (IDM): 520A
  • Power Dissipation (PD): 330W (at 25°C)
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 4.7mΩ (at VGS = 10V, ID = 65A)
  • Total Gate Charge (Qg): 210nC (typical)
  • Input Capacitance (Ciss): 9000pF (typical)
  • Output Capacitance (Coss): 1800pF (typical)
  • Reverse Transfer Capacitance (Crss): 150pF (typical)
  • Operating Temperature Range: -55°C to +175°C

Descriptions:

  • The IRFP4668PBF is a high-power N-Channel MOSFET designed for high-current switching applications.
  • It features low on-resistance and fast switching performance, making it suitable for power supplies, motor control, and inverters.
  • The TO-247AC package provides efficient thermal dissipation.

Features:

  • Low RDS(on) for reduced conduction losses.
  • High current handling capability (130A continuous).
  • Fast switching speed for efficient power conversion.
  • Avalanche energy rated for ruggedness in demanding environments.
  • Lead-free and RoHS compliant.

This MOSFET is commonly used in high-power applications such as DC-DC converters, motor drives, and industrial power systems.

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