Professional IC Distribution & Technical Solutions

The IRFP4668PBF is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

Specifications:

• Manufacturer: Infineon Technologies
• Part Number: IRFP4668PBF
• Type: N-Channel Power MOSFET
• Package: TO-247AC
• Drain-Source Voltage (V_DSS): 200V
• Continuous Drain Current (I_D): 130A (at 25°C)
• Pulsed Drain Current (I_DM): 520A
• Power Dissipation (P_D): 330W (at 25°C)
• Gate-Source Voltage (V_GS): ±20V
• On-Resistance (R_DS(on)): 4.7mΩ (at V_GS = 10V, I_D = 65A)
• Total Gate Charge (Q_g): 210nC (typical)
• Input Capacitance (C_iss): 9000pF (typical)
• Output Capacitance (C_oss): 1800pF (typical)
• Reverse Transfer Capacitance (C_rss): 150pF (typical)
• Operating Temperature Range: -55°C to +175°C

Descriptions:

• The IRFP4668PBF is a high-power N-Channel MOSFET designed for high-current switching applications.
• It features low on-resistance and fast switching performance, making it suitable for power supplies, motor control, and inverters.
• The TO-247AC package provides efficient thermal dissipation.

Features:

• Low R_DS(on) for reduced conduction losses.
• High current handling capability (130A continuous).
• Fast switching speed for efficient power conversion.
• Avalanche energy rated for ruggedness in demanding environments.
• Lead-free and RoHS compliant.

This MOSFET is commonly used in high-power applications such as DC-DC converters, motor drives, and industrial power systems.