Professional IC Distribution & Technical Solutions

The IRF2807S is a power MOSFET manufactured by International Rectifier (IR). Below are the key specifications, descriptions, and features from the Manufactor Datasheet:

Manufacturer Specifications (IRF2807S):

• Type: N-Channel Power MOSFET
• Drain-Source Voltage (V_DSS): 75V
• Continuous Drain Current (I_D): 82A @ 25°C
• Pulsed Drain Current (I_DM): 330A
• Gate-Source Voltage (V_GS): ±20V
• Power Dissipation (P_D): 330W @ 25°C
• On-Resistance (R_DS(on)): 0.009Ω (max) @ V_GS = 10V
• Total Gate Charge (Q_g): 170nC (typical)
• Input Capacitance (C_iss): 5400pF (typical)
• Output Capacitance (C_oss): 1100pF (typical)
• Reverse Transfer Capacitance (C_rss): 300pF (typical)
• Turn-On Delay Time (t_d(on)): 15ns (typical)
• Rise Time (t_r): 60ns (typical)
• Turn-Off Delay Time (t_d(off)): 50ns (typical)
• Fall Time (t_f): 30ns (typical)
• Operating Junction Temperature (T_J): -55°C to +175°C
• Package: TO-263 (D2PAK)

Description:

The IRF2807S is a high-performance N-channel MOSFET designed for high-current, low-voltage applications. It features low on-resistance and fast switching characteristics, making it suitable for power management in DC-DC converters, motor control, and other high-efficiency applications.

Key Features:

• Low R_DS(on): Ensures minimal conduction losses.
• High Current Capability: Supports up to 82A continuous current.
• Fast Switching: Optimized for high-frequency applications.
• Avalanche Rated: Robust design for rugged performance.
• Lead-Free & RoHS Compliant: Meets environmental standards.

This information is based on the manufacturer's datasheet for the IRF2807S.