Professional IC Distribution & Technical Solutions

Global leader in semiconductor components distribution and technical support services, empowering your product innovation and industry advancement

Product Catalog Contact Us
Home > IR > IRS2511GS

IRS2511GS Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
IRS2511GSIR109Yes

IRS2511GS** is a high-voltage, high-speed power MOSFET and IGBT driver from Infineon Technologies.

The IRS2511GS is a high-voltage, high-speed power MOSFET and IGBT driver from Infineon Technologies. Below are its key specifications, descriptions, and features:

Manufacturer:

Infineon Technologies

Specifications:

  • Output Current (Source/Sink): 1.5A / 2.0A
  • Supply Voltage (VCC): 10V to 20V
  • Logic Input Voltage (VIN): 3.3V, 5V, 15V compatible
  • Propagation Delay (tP): 120ns (typical)
  • Deadtime (Programmable): Yes (via external resistor)
  • Operating Temperature Range: -40°C to +125°C
  • Package: 8-Pin SOIC

Descriptions:

The IRS2511GS is a high-performance gate driver IC designed for driving both MOSFETs and IGBTs in half-bridge configurations. It features a floating channel for high-side driving, integrated deadtime control, and robust protection against shoot-through.

Features:

  • Floating High-Side Driver: Supports bootstrap operation
  • Programmable Deadtime: Adjustable via external resistor
  • Under-Voltage Lockout (UVLO): For both high-side and low-side drivers
  • 3.3V, 5V, and 15V Logic Input Compatible
  • Matched Propagation Delays: Minimizes timing distortion
  • Shoot-Through Protection: Prevents cross-conduction
  • Low Quiescent Current: Suitable for energy-efficient applications

This driver is commonly used in motor control, power supplies, and inverters.

Request Quotation

Part Number:
Quantity:
Target Price($USD):
Email:
Contact Person:
Additional Part Number
Quantity (Additional)
Special Requirements
Verification: =

Recommended Products

  • IRFT002 ,475,ZIP11

    IRFT002 Manufacturer IR Specifications:** - **Type:** Infrared (IR) Transmitter - **Wavelength:** Typically 940nm (may vary by manufacturer) - **Forward Current (If):** 20mA (standard) - **Forward Voltage (Vf):** 1.

  • IRF640NPBF ,48050,TO220

    IRF640NPBF is a power MOSFET manufactured by Infineon Technologies.

  • IR505M ,669,SOP-8

    IR505M is an infrared (IR) emitter diode manufactured by **Infrared Remote Solutions (IRS)**.

  • HM3-6561-9,HMS,11,DIP18

    BSY90,ITT,11,CAN

Sales Support

Our sales team is ready to assist with:

  • Fast quotation
  • Price Discount
  • Technical specifications
Contact sales