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2N7002L Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2N7002LONSEMI21000Yes

Small Signal MOSFET 115 mA, 60 Volts

The 2N7002L is a N-Channel Enhancement Mode Field Effect Transistor (FET) manufactured by ON Semiconductor.

Key Specifications:

  • Drain-Source Voltage (VDS): 60V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): 115mA
  • Power Dissipation (PD): 200mW
  • Threshold Voltage (VGS(th)): 0.8V to 3.0V
  • On-Resistance (RDS(on)): 7.5Ω (max) at VGS = 10V, ID = 50mA
  • Input Capacitance (Ciss): 25pF (typical)
  • Output Capacitance (Coss): 8pF (typical)
  • Reverse Transfer Capacitance (Crss): 3pF (typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-23 (3-pin)

Descriptions:

  • The 2N7002L is a low-threshold, low-power MOSFET designed for switching and amplification in small-signal applications.
  • It is optimized for low-voltage operation and provides high efficiency in battery-powered circuits.
  • The device is RoHS compliant and halogen-free, making it suitable for environmentally conscious designs.

Features:

  • Low Threshold Voltage (suitable for 3V/5V logic levels)
  • Fast Switching Speed
  • Low Input Capacitance
  • ESD Protection (up to 2kV HBM)
  • Compact SOT-23 Package for space-constrained applications

This MOSFET is commonly used in load switching, level shifting, signal amplification, and general-purpose switching in portable electronics, IoT devices, and low-power circuits.

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