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2SC1685-Q Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC1685-QPAN451Yes

2SC1685-Q** is a high-frequency, low-noise NPN bipolar junction transistor (BJT) manufactured by **PAN (Panasonic)**.

The 2SC1685-Q is a high-frequency, low-noise NPN bipolar junction transistor (BJT) manufactured by PAN (Panasonic). Below are the key specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Material: Silicon (Si)
  • Maximum Collector-Base Voltage (VCB): 30V
  • Maximum Collector-Emitter Voltage (VCE): 20V
  • Maximum Emitter-Base Voltage (VEB): 5V
  • Maximum Collector Current (IC): 50mA
  • Power Dissipation (PD): 200mW
  • Transition Frequency (fT): 1.5GHz (typical)
  • Noise Figure (NF): 1.2dB (typical at 1GHz)
  • DC Current Gain (hFE): 30 to 200 (depending on operating conditions)
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

  • Designed for RF amplification in VHF/UHF applications.
  • Suitable for low-noise, high-frequency circuits such as FM tuners, RF amplifiers, and communication systems.
  • Available in TO-92 package.

Features:

  • Low noise performance for sensitive signal amplification.
  • High transition frequency (fT) for RF applications.
  • Stable gain characteristics across a wide frequency range.
  • Compact and widely used in consumer and industrial electronics.

This transistor is commonly used in radio frequency (RF) circuits where low noise and high-frequency operation are critical.

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