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N8T25N Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
N8T25NSA303Yes

N8T25N is a power MOSFET manufactured by SA (Semiconductor Applications).

The N8T25N is a power MOSFET manufactured by SA (Semiconductor Applications). Below are the factual specifications, descriptions, and features:

Specifications:

  • Manufacturer: SA (Semiconductor Applications)
  • Type: N-Channel Power MOSFET
  • Drain-Source Voltage (VDSS): 25V
  • Continuous Drain Current (ID): 8A
  • Pulsed Drain Current (IDM): 32A
  • Power Dissipation (PD): 30W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(ON)): 0.045Ω (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 1V (min), 2.5V (max)
  • Input Capacitance (Ciss): 300pF (typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-252 (DPAK)

Description:

The N8T25N is an N-channel enhancement-mode power MOSFET designed for high-efficiency switching applications. It features low on-resistance and fast switching speeds, making it suitable for power management in DC-DC converters, motor control, and other power electronics applications.

Features:

  • Low RDS(ON) for reduced conduction losses
  • Fast switching performance
  • High current handling capability
  • Improved thermal performance due to DPAK package
  • Suitable for automotive and industrial applications

For exact performance characteristics, refer to the manufacturer's datasheet.

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