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N9602N Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
N9602NSA185Yes

Manufacturer:** SA (Samsung Electronics) **Part Number:** N9602N ### **Specifications:** - **Type:** N-channel MOSFET - **Technology:** Power MOSFET - **Drain-Source Voltage (VDSS):** 30V - **Continuous Drain Current (ID

Manufacturer: SA (Samsung Electronics)

Part Number: N9602N

Specifications:

  • Type: N-channel MOSFET
  • Technology: Power MOSFET
  • Drain-Source Voltage (VDSS): 30V
  • Continuous Drain Current (ID): 60A
  • RDS(on) (Max): 3.5mΩ @ VGS = 10V
  • Gate-Source Voltage (VGS): ±20V
  • Power Dissipation (PD): 100W
  • Package: TO-220

Descriptions:

The N9602N is a high-performance N-channel MOSFET designed for power management applications. It offers low on-resistance and high current handling, making it suitable for switching and amplification circuits in power supplies, motor control, and DC-DC converters.

Features:

  • Low RDS(on) for reduced conduction losses
  • High current capability
  • Fast switching speed
  • Robust thermal performance
  • Avalanche energy rated
  • Lead-free and RoHS compliant

This information is based on standard specifications and may vary slightly depending on the datasheet version. Always refer to the official datasheet for precise details.

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