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TPHR9003NL,L1Q(M Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
TPHR9003NL,L1Q(MTOSHIBA15000Yes

Manufacturer:** TOSHIBA **Part Number:** TPHR9003NL, L1Q(M ### **Specifications:** - **Type:** Power MOSFET - **Technology:** N-Channel - **Voltage Rating (VDS):** 30V - **Current Rating (ID):** 60A - **Power Dissipation (PD):** 50W -

Manufacturer: TOSHIBA

Part Number: TPHR9003NL, L1Q(M

Specifications:

  • Type: Power MOSFET
  • Technology: N-Channel
  • Voltage Rating (VDS): 30V
  • Current Rating (ID): 60A
  • Power Dissipation (PD): 50W
  • On-Resistance (RDS(on)): 3.0mΩ (max) @ VGS = 10V
  • Gate Threshold Voltage (VGS(th)): 1.0V (min) – 2.5V (max)
  • Input Capacitance (Ciss): 3000pF (typ)
  • Package: TO-220AB

Descriptions:

The TPHR9003NL is a high-performance N-Channel MOSFET designed for power switching applications. It features low on-resistance and high current handling capability, making it suitable for power management in automotive, industrial, and consumer electronics.

Features:

  • Low on-resistance (RDS(on)) for reduced conduction losses
  • High-speed switching performance
  • Low gate charge for improved efficiency
  • Avalanche energy specified for ruggedness
  • Lead-free and RoHS compliant

This MOSFET is optimized for applications such as DC-DC converters, motor control, and power supply circuits.

*(Note: Always verify datasheet details from the manufacturer for exact specifications.)*

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