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SI2301CDS-T1-GE3 Specifications

Detailed technical information and Application Scenarios

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PartNumberManufactorQuantityAvailability
SI2301CDS-T1-GE3VISHAY34800Yes

Manufacturer:** VISHAY **Part Number:** SI2301CDS-T1-GE3 ### **Specifications:** - **Transistor Type:** P-Channel MOSFET - **Drain-Source Voltage (VDS):** -20V - **Gate-Source Voltage (VGS):** ±12V - **Continuous Drain Current (ID):** -3.

Manufacturer: VISHAY

Part Number: SI2301CDS-T1-GE3

Specifications:

  • Transistor Type: P-Channel MOSFET
  • Drain-Source Voltage (VDS): -20V
  • Gate-Source Voltage (VGS): ±12V
  • Continuous Drain Current (ID): -3.7A
  • RDS(ON) (Max): 85mΩ @ VGS = -4.5V
  • Power Dissipation (PD): 1.25W
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-23 (TO-236AB)

Descriptions:

The SI2301CDS-T1-GE3 is a P-Channel MOSFET designed for low-voltage, high-efficiency switching applications. It features low on-resistance and fast switching performance, making it suitable for power management in portable electronics, battery protection circuits, and load switching.

Features:

  • Low threshold voltage
  • High current handling capability
  • Compact SOT-23 package for space-constrained designs
  • Lead-free and RoHS compliant
  • Halogen-free according to IEC 61249-2-21

This information is strictly factual and based on manufacturer datasheets.

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